China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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igbt power driver module

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Automotive IGBT Modules NXH80T120L3Q0P3G Power Module 1200V High Speed IGBT Module [MJD Advantage] + 15 years experience for electronic components + ... 2024-12-09 23:42:12
FZ750R65KE3P2 Automotive IGBT Modules IGBT Modules Discrete And Power Modules [MJD Advantage] + 15 years experience for electronic components + Secure ... 2024-12-10 00:44:43
... temperature sensor, crimping process technology, and pre coated thermal interface materials. ​Specification Of FF8MR12W2M1PB11BPSA1 Part Number ... 2025-07-15 00:20:33
...Module NXH25T120L2Q1PG Automotive IGBT Modules 1200V 81W IGBT Modules​ Product Description Of NXH25T120L2Q1PG NXH25T120L2Q1PG has a two 1200 V, 25 ... 2024-12-09 22:21:11
... NXH40T120L3Q1PTG Configuration Three Phase Inverter Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 42 A Power - ... 2024-12-09 22:21:11
Power Module Fourpack Topology A2F12M12W2-F1 SiC Power MOSFET IGBT Module Full Bridge Description Of A2F12M12W2-F1 This A2F12M12W2-F1 is ACEPACK 2 ... 2025-07-15 00:20:33
... topology that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of ... 2025-07-15 00:20:33
...Operating Temperature: -40°C ~ 175°C (TJ) Type: IGBTs - Modules Supplier Device Package: AG-ECONOD Features Of FF900R12ME7PB11 Highest power ... 2025-07-15 00:20:33
.... ​Specification Of FS100R12W2T7BOMA1 Part Number FS100R12W2T7BOMA1 Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) ... 2025-07-15 00:20:33
...IGBT Modules 3 Phase Inverter NXH350N100H4Q2F2P1G 3-Phase Inverter NXH350N100H4Q2F2P1G 1kV High Denity IGBT Silicon Modules​ Product Description Of ... 2024-12-09 22:24:04
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