China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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igbt 400a 1200v modules 6n channel

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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igbt 400a 1200v modules 6n channel

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...IGBT Module NXH25T120L2Q1PTG Q1 1200V 81W Automotive IGBT Modules NXH25T120L2Q1PTG Q1 3-Phase TNPC Module 1200V 81W​ Product Description Of ... 2025-07-21 00:23:59
... device is a 1200 V, 79 A buck chopper silicon carbide (SiC) MOSFET power module. Specification Of MSCSM120SKM31CTBL1NG Part Number MSCSM120SKM31CT... 2024-12-09 22:24:04
...Channel FF6MR12W2M1B11BOMA1 Automotive IGBT Modules 1200V Silicon Carbide Product Description Of FF6MR12W2M1B11BOMA1 FF6MR12W2M1B11BOMA1 is 2 N... 2025-07-21 00:23:59
...-applied Thermal Interface Material. ​Specification Of FF6MR12KM1PHOSA1 Part Number FF6MR12KM1PHOSA1 Configuration 2 N-Channel (Half Bridge) Drain ... 2025-07-21 00:23:59
... Module. ​Specification Of F423MR12W1M1PB11BPSA1 Part Number F423MR12W1M1PB11BPSA1 Vgs(th) (Max) @ Id 5.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs ...... 2025-07-21 00:23:59
... Mount, 2 N-Channel Transistors Module. ​Specification Of DF8MR12W1M1HFB67BPSA1 Part Number DF8MR12W1M1HFB67BPSA1 Technology Silicon Carbide (SiC) ... 2025-07-21 00:23:59
1200V Automotive IGBT Modules MSC130SM120JCU2 N-Channel Silicon Carbide SOT-227-4​ Product Description Of MSC130SM120JCU2 MSC130SM120JCU2 is a 1200V, ... 2024-12-09 22:12:14
Automotive IGBT Modules FF200R12KT4 1200V Half Bridge 1.1kW N-Channel IGBT Modules [MJD Advantage] + 15 years experience for electronic components + ... 2024-12-09 23:38:20
...™ MOSFET, NTC, and PressFIT Contact Technology. ​Specification Of F415MR12W2M1B76BOMA1 Part Number F415MR12W2M1B76BOMA1 Technology Silicon Carbide ... 2025-07-21 00:23:59
... On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Package / Case: Module Technology: MOSFET (Metal ... 2025-07-21 00:23:59
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