China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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half bridge igbt module

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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Mr.Sales Manager
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half bridge igbt module

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...Module NXH80T120L2Q0S2G IGBT Silicon Modules 158W Automotive IGBT Modules​ Product Description Of NXH80T120L2Q0S2G NXH80T120L2Q0S2G The integrated ... 2024-12-09 22:21:11
... is 1200V 75A 188W IGBT Module Trench Field Stop Half Bridge. Specification Of NXH80T120L3Q0S3G Part Number NXH80T120L3Q0S3G Input Capacitance ... 2025-07-31 00:21:52
IGBT Module FF23MR12W1M1PB11BPSA1 Automotive IGBT Modules 20mW Trench 2Independent ​ Product Description Of FF23MR12W1M1PB11BPSA1 FF23MR12W1M1PB11BPSA... 2025-07-31 00:21:52
Silicon Carbide Modules FF08MR12W1MA1B11ABPSA1 1200V Half Bridge Module Overview Of FF08MR12W1MA1B11ABPSA1 FF08MR12W1MA1B11ABPSA1 is 8 mΩ halfbridge ... 2025-07-31 00:21:52
... On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Package / Case: Module Technology: MOSFET (Metal ... 2025-07-31 00:21:52
...-applied Thermal Interface Material. ​Specification Of FF6MR12KM1PHOSA1 Part Number FF6MR12KM1PHOSA1 Configuration 2 N-Channel (Half Bridge) Drain ... 2025-07-31 00:21:52
Dual 1200V CoolSiC Module FF23MR12W1M1B11BOMA1 Automotive IGBT Modules 50A 20mW​ Product Description Of FF23MR12W1M1B11BOMA1 FF23MR12W1M1B11BOMA1 Dual ... 2025-07-31 00:21:52
Automotive IGBT Modules FF2MR12W3M1HB11BPSA1 Silicon Carbide 4N-Channel Module​ Product Description Of FF2MR12W3M1HB11BPSA1 FF2MR12W3M1HB11BPSA1 is ... 2025-07-31 00:21:52
...™ MOSFET, NTC, and PressFIT Contact Technology. ​Specification Of F415MR12W2M1B76BOMA1 Part Number F415MR12W2M1B76BOMA1 Technology Silicon Carbide ... 2025-07-31 00:21:52
...™ IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology. ​Specification Of FS50R12W2T7B11BOMA1 Part Number FS50R12W2T7B11BOMA1 ... 2025-07-31 00:21:52
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