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fast charging chip 650v 8a
Selling leads
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... Oxide) Rds On (Max) @ Id, Vgs 190mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs 7 nC @
2025-07-30 00:16:05
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... Rds On (Max) @ Id, Vgs 111mOhm @ 11.2A, 18V Vgs(th) (Max) @ Id 5.7V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs 19 nC @ 18 V Vgs (Max) +20V, -2V Features ...
2025-07-30 00:16:21
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... Rds On (Max) @ Id, Vgs 34mOhm @ 38.3A, 18V Vgs(th) (Max) @ Id 5.7V @ 11mA Gate Charge (Qg) (Max)
2025-07-30 00:16:08
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... (Ciss) (Max) @ Vds 1393 pF @ 400 V Technology SiCFET (Silicon Carbide) Vgs (Max) +20V, -2V Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
2025-07-30 00:16:08
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...Chip TW027N65C,S1F N-Channel Transistors TO-247-3 Silicon Carbide Product Description Of TW027N65C,S1F TW027N65C,S1F is 650V 58A(Tc) 156W (Tc) ...
2025-07-30 00:16:23
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...Chip TW048N65C,S1F TO-247-3 Silicon Carbide N-Channel Transistors Product Description Of TW048N65C,S1F TW048N65C,S1F is 650V 65mOhms SiC N-Channel ...
2025-07-30 00:16:23
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Automobile Chips AFGY160T65SPD-B4 Single IGBT Transistors TO-247-3 Field Stop Trench IGBT Product Description Of AFGY160T65SPD-B4 AFGY160T65SPD-B4 is ...
2025-07-30 00:16:21
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... fast body diode featuring ultra low Qr. Specification Of IPBE65R230CFD7AATMA1 Part Number IPBE65R230CFD7AATMA1 Transistor Polarity: N-Channel ...
2025-07-30 00:16:21
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..., and thermal capacitance ratings at low reverse current for lower switching loss. Specification Of MSC360SMA120 Part Number: MSC360SMA120 Gate ...
2025-07-30 00:16:09
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...Chip SC2010A QFN32 Product Description Of SC2010AQDER SC2010AQDER is a highly integrated USB PD controller. SC2010AQDER is compliant with the ...
2025-06-22 00:16:27
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