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fast charging chip 20a
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...Chip IPW50R199CPFKSA1 N-Channel 550 V 17A Single Transistors Product Description Of IPW50R199CPFKSA1 IPW50R199CPFKSA1 is N-Channel 550 V 17A (Tc) ...
2025-08-01 00:16:29
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...Chips FFSD1065B-F085 TO-252 Silicon Carbide Schottky Diodes Product Description Of FFSD1065B-F085 FFSD1065B-F085 is Silicon Carbide Schottky ...
2025-08-01 00:16:29
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Chip Integrated Circuit IPQC60R010S7A FETs MOSFETs Transistors PG-HDSOP-22 Product Description Of IPQC60R010S7A IPQC60R010S7A optimized for low ...
2025-08-01 00:16:40
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...Chip Product Description Of IPP65R190CFD7A IPP65R190CFD7A is 650V CoolMOS CFD7A SJ Power Device, the package is TO-220-3, Through Hole. Specificat...
2025-08-01 00:16:40
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... Oxide) Rds On (Max) @ Id, Vgs 190mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs 7 nC @
2025-08-01 00:16:29
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...Chip IAUT260N10S5N019 N-Channel 100V 260A 300W Surface Mount Transistors Product Description Of IAUT260N10S5N019 IAUT260N10S5N019 is N-Channel 100 ...
2025-08-01 00:16:40
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...-8-1. Specification Of IAUT150N10S5N035 Part Number: IAUT150N10S5N035 Power Dissipation (Max): 166W (Tc) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ ...
2025-08-01 00:16:33
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...Chip MSC017SMA120 N-Channel 113A Through Hole Transistors Product Description Of MSC017SMA120 MSC017SMA120 MOSFETs provide high efficiency to ...
2025-08-01 00:16:33
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..., and thermal capacitance ratings at low reverse current for lower switching loss. Specification Of MSC360SMA120 Part Number: MSC360SMA120 Gate ...
2025-08-01 00:16:33
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... low 22.7nC to 23.0nC reverse recovery charge. Specification Of IMBF170R650M1 Part Number: IMBF170R650M1 VGS: -5 - 23 V Gate-Source Leakage Current...
2025-08-01 00:16:32
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