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ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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dual anti parallel diode power modules

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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dual anti parallel diode power modules

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Automotive IGBT Modules MSC2X30SDA070J 700V Dual Anti-Parallel Diode Power Modules [MJD Advantage] + 15 years experience for electronic components + ... 2025-05-11 04:34:04
Automotive IGBT Modules MSCDC100KK70D1PAG Dual Common Cathode SiC Diode Power Module [MJD Advantage] + 15 years experience for electronic components + ... 2024-12-09 23:42:00
Automotive IGBT Modules MSCDC200KK170D1PAG Dual Common Cathode SiC Diodes Power Module [MJD Advantage] + 15 years experience for electronic components ... 2025-05-12 01:45:04
... 4pin package, Technology with the highest power density with up to 140 A rating. Specification Of IKY75N120CH7XKSA1 Part Number IKY75N120CH7XKSA1 ... 2025-07-14 00:19:59
Diode Power Modules MSC2X51SDA170J Integrated Circuit Chip SOT-227-4 N-Channel​ Product Description Of MSC2X51SDA170J MSC2X51SDA170J is Dual Silicon ... 2025-07-15 00:21:31
Medium Power Econo FF900R12ME7WB11BPSA1 1200V 900A dual three-phase PIM IGBT modules Detailed Description FF900R12ME7WB11BPSA1 is 1200 V, 900 A dual ... 2025-07-14 00:20:16
...Modules 3 Phase Inverter NXH350N100H4Q2F2P1G 3-Phase Inverter NXH350N100H4Q2F2P1G 1kV High Denity IGBT Silicon Modules​ Product Description Of ... 2024-12-09 22:24:04
... IGBTs with rugged anti−parallel diodes. Specification Of NXH450B100H4Q2F2PG Part Number NXH450B100H4Q2F2PG Gate-Emitter Leakage Current: 2 uA Pd - ... 2024-12-09 22:24:04
...−performance IGBTs with rugged anti−parallel diodes. Specification Of NXH400N100H4Q2F2PG Part Number NXH400N100H4Q2F2PG Vce(on) (Max) @ Vge, Ic 2... 2024-12-09 22:21:11
... This high−density, integrated power module combines high−performance IGBTs with 1200 V SiC diode. Specification Of NXH300B100H4Q2F2PG Part Number ... 2024-12-09 22:21:23
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