481 - 489 of 489
d1p sic diode module
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... IGBTs with rugged anti−parallel diodes. Specification Of NXH450B100H4Q2F2PG Part Number NXH450B100H4Q2F2PG Gate-Emitter Leakage Current: 2 uA Pd - ...
2024-12-09 22:24:04
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1200V Silicon Carbide MSC017SMA120J N-Channel Power MOSFET Module SOT-227-4 Product Description Of MSC017SMA120J MSC017SMA120J is Silicon Carbide N...
2025-07-14 00:20:07
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...1700V 300A 20mW Medium Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, ...
2025-07-17 00:21:06
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...acquisition system.On the transmitter side,the MAXM86161EFD+T has three programmable high-current LED drivers.On the receiver side, MAXM86161EFD+T ...
2025-07-14 00:19:58
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...60 A very high speed V series IGBT featuring freewheeling SiC diode. Specification Of STGWA60V60DWFAG Part Number STGWA60V60DWFAG IGBT Type Trench ...
2025-07-14 00:20:05
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.... Specification Of MSC080SMA120J Part Number: MSC080SMA120J Product: IGBT Silicon Carbide Modules Type: Power MOSFET Technology: SiC Vgs - Gate...
2025-07-14 00:20:07
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... MSC040SMA120S provide high efficiency with low switching losses. The MSC040SMA120S SiC MOSFETs do not require any freewheeling diodes. Specificati...
2025-07-14 00:20:07
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...Chip TO-247-3 N-Channel Product Description Of MSC035SMA070B MSC035SMA070B is a 700 V, 35 mΩ SiC MOSFET in a TO-247 package. Fast and reliable ...
2025-07-14 00:20:07
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...1700V Single IGBTs Transistors IXYN50N170CV1 Automotive IGBT Modules SOT-227-4 Product Description Of IXYN50N170CV1 IXYN50N170CV1 is 1700V/120A ...
2024-12-09 22:24:04
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