171 - 180 of 251
low capacitance silicon photodiodes
Selling leads
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... μm Photosensitivity (typical value) 1.1 A/W Dark current (Max.) 0.75 nA Cut-off frequency (typical value) 200 MHz Junction capacitance (typical)
2025-04-29 14:35:19
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...Photodiode for Optical Power Meters and Laser Power Detection Features: InGaAs PIN photodiode for long near-infrared detection Wide spectral ...
2026-04-02 07:30:11
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Product Description: GT-UV405-LW GaN UV Sensor Is Used For UV Smoke Detection In UV Aging Box Features: Indium Gallium Nitride Based Material l ...
2025-04-08 18:04:31
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...-010K InGaAs PIN Photodiode Long wavelength Type (cut-off wavelength: 2.6μm) Features: Long wavelength type (cut-off wavelength: 2.6μm) peculiarity ...
2026-05-03 00:27:01
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...Photodiode Array Is Used In Measurement Equipment Features: Quadrant-type Features -Photosensitive area G6849 :ф2 mm quadrant element G6849-01: ф1 ...
2025-10-30 00:18:30
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S12060-10 Near infrared Si APD Low Temperature Coefficient Type APD for 800nm Band This is an 800nm band near-infrared Si APD that can operate ...
2026-04-14 12:42:20
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S2386-18L Si Photodiode For Visible to Near IR General Purpose Photometry Features High sensitivity in visible to near infrared range Low dark current ...
2026-02-10 13:34:45
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S1133 S1133-01 S1133-14 S16868-02MS Ceramic package photodiode with low dark current Features: lS1087, S1133 : For visible range S1087-01, S1133-01: ...
2025-09-17 13:04:50
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S2386-18K Si Photodiodes For Visible to Near IR General Purpose Photometry High Sensitivity Features High sensitivity in visible to near infrared ...
2025-08-24 15:06:24
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S6428-01 Si Photodiodes RGB Color Sensor Plastic Material Features -Plastic package (6 × 8 mm) -Spectral response range: 400 to 540 nm (λp=460 nm) ...
2025-08-24 15:06:24
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