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tpd2e001dzdr esd protection array
Selling leads
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...Write within 5 ms – Page Write within 5 ms • Write Protect: quarter, half or whole memory array • High-speed clock: 20 MHz • Single supply voltage: ...
2024-12-09 22:42:04
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...byte Page Write Buffer • Self−timed Write Cycle • Hardware and Software Protection • Block Write Protection− Protect 1/4, 1/2 or Entire EEPROM ...
2024-12-09 22:37:32
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..., 10-μA Max ICC ±24-mA Output Drive at 3.3 V Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection Latch-Up Performance ...
2024-12-09 22:37:47
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... M-LVDS Standard Pin Selectable M-LVDS Receiver Type (1 or 2) Controlled Transition Times (2.0 ns typ) Minimize Reflections 8 kV ESD on M-LVDS I/O ...
2024-12-09 22:37:47
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... 91 V • Peak Power − 1500 W @ 1.0 ms • ESD Rating of Class 3 (>16 kV) per Human Body Model • Maximum Clamp Voltage @ Peak Pulse Current • Low ...
2024-12-09 22:38:25
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... capabilities of silicon−oxide passivated junctions. All this in an axial lead, transfer−molded plastic package that offers protection in all ...
2024-12-09 22:38:38
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... ▪ Reverse battery protection ▪ Solid-state reliability ▪ Factory-programmed at end-of-line for optimum performance ▪ Robust EMC performance ▪ High ...
2024-12-09 22:38:38
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...Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% ...
2024-12-09 22:41:27
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... WRITE (up to 16 Bytes) ■ RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up ...
2024-12-09 22:41:27
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...−oxide passivated junctions. All this in an axial lead, transfer−molded plastic package that offers protection in all common environmental ...
2024-12-09 22:41:39
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