551 - 560 of 1104
silicon power transistors
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STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A SECOND GENERATION MOSFET General Features ■ 100% AVALANCHE TESTED ■ LOW INPUT CAPACITANCE AND GATE CHARGE ■ ...
2024-12-09 22:38:51
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BYV26EGP-E3/73 Glass Passivated Ultrafast Rectifier FEATURES Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage ...
2024-12-09 22:38:51
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TDA2003A 10 W car radio audio amplifier Features ■ Improved performance over the TDA2002 (pinto-pin compatible) ■ Very low number of external ...
2024-12-09 22:38:51
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TDA2030A 18W Hi-Fi AMPLIFIER AND 35W DRIVER DESCRIPTION The TDA2030A is a monolithic IC in Pentawatt package intended for use as low frequency class ...
2024-12-09 22:38:51
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Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23 Features • Leading Trench Technology for Low RDS(on) • −1.8 V Rated for Low Voltage Gate ...
2024-12-09 22:41:27
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Ultrafast Rectifier, 30 A FRED PtTM FEATURES • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction ...
2024-12-09 22:41:27
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SFH6206-2T Optocoupler, Phototransistor Output, AC Input circuit board ic FEATURES • Good CTR linearity depending on forward current • Isolation test ...
2024-12-09 22:41:27
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SGP02N120, SGB02N120, SGD02N120 Fast S-IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs ...
2024-12-09 22:41:27
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. . . designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an ...
2024-12-09 22:41:27
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BT139 series E Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general ...
2024-12-09 22:41:27
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