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high power igbt module
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STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK Zener-Protected SuperMESH™ MOSFET General ...
2024-12-09 22:38:38
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... ▪ Reverse battery protection ▪ Solid-state reliability ▪ Factory-programmed at end-of-line for optimum performance ▪ Robust EMC performance ▪ High ...
2024-12-09 22:38:38
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...Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes, these state−of−the−art devices ...
2024-12-09 22:38:38
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HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS = 800 V ID25 = 27 A RDS(on) = 300 m trr ≤ 250 ns N-Channel ...
2024-12-09 22:38:51
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... • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = ...
2024-12-09 22:38:51
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P10NK80ZFP smd power mosfet Power Mosfet Transistor N-CHANNEL Zener-Protected SuperMESH⑩Power MOSFET
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... Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP STW10NK80Z 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω 9 A ...
2024-12-09 22:41:27
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SOT-23 Plastic-Encapsulate Transistors FEATURES ► Complementary to S9013 ► Excellent hFE linearity MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless ...
2024-12-09 22:41:27
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... Maximum Ratings Item Symbol Value Unit Power dissipation Pd * 1.0 W Junction temperature Tj 200 °C Storage temperature Tstg –65 to +200 °C Main ...
2024-12-09 22:41:27
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...Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 80−100 VOLTS This series uses the Schottky Barrier principle with a platinum barrier metal. ...
2024-12-09 22:41:27
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...POWER SCHOTTKY RECTIFIER Rectifier Diode FEATURES AND BENEFITS ■ VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST ...
2024-12-09 22:41:27
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