11 - 14 of 14
430v metal oxide varistor
Selling leads
|
... (MAX) AT VDD = 18V TA = 25°C ■ 100% TESTED FOR QUIESCENT CURRENT DESCRIPTION The HCF4081B is a monolithic integrated circuit fabricated in Metal ...
2024-12-09 22:42:04
|
|
... metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally ...
2024-12-09 22:41:27
|
|
...diode schottky rectifier diode . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial constructio...
2024-12-09 22:41:27
|
|
...devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial constructi...
2024-12-09 22:41:27
|