7451 - 7460 of 7985
128b memory ic chip
Selling leads
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1.5KE250A TVS Diode Transient Voltage Suppressors Features ■ Peak pulse power: 1500 W (10/1000 µs) ■ Breakdown voltage range: From 6.8 V to 440 V ■ ...
2024-12-09 22:41:27
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SM712.TCT Asymmetrical TVS Diode for Extended Common-Mode RS-485 PROTECTION PRODUCTS The SM712 transient voltage suppressor (TVS) diode is designed ...
2024-12-09 22:41:27
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BZV85C7V5 DO-41 SILICON PLANAR POWER ZENER Diode Features Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high ...
2024-12-09 22:41:27
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BZG03C120TR Silicon Z-Diodes Features Glass passivated junction High reliability Voltage range 10V to 270V Fits onto 5 mm SMD footpads Wave and reflow ...
2024-12-09 22:41:27
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BZG03C30TR Zener Diodes Features Glass passivated junction High reliability Voltage range 10V to 270V Fits onto 5 mm SMD footpads Wave and reflow ...
2024-12-09 22:41:27
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SS32-E3-57T Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage ...
2024-12-09 22:41:27
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GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and ...
2024-12-09 22:41:27
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TOSHIBA Transistor Silicon PNP Epitaxial Type Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 ...
2024-12-09 22:41:27
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HEXFET Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (
2024-12-09 22:41:27
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T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS
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T4 Series 4A TRIACS Main Features Symbol Value Unit IT(RMS) 4 A VDRM/VRRM 600 to 800 V IGT (Q1) 5 to 35 mA DESCRIPTION Based on ST’s Snubberless / ...
2024-12-09 22:41:27
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