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Low Thermal Resistance 100 V N-Channel NexFET Power MOSFETs CSD19533Q5A

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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Low Thermal Resistance 100 V N-Channel NexFET Power MOSFETs CSD19533Q5A

Brand Name TI
Model Number CSD19533Q5A
Certification Original Factory Pack
Place of Origin Original
Minimum Order Quantity 20pcs
Price Negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 5200PCS
Delivery Time 1 Day
Packaging Details please contact me for details
Description N-Channel 100 V 100A (Ta) 3.2W (Ta), 96W (Tc) Surface Mount 8-VSONP (5x6)
Drain-to-Source Voltage 100 V
Gate Charge Total (10 V) 27 nC
Gate Charge Gate to Drain 4.9 nC
Drain-to-Source On Resistance 8.7 mΩ
Threshold Voltage 2.8 V
Detailed Product Description

FEATURES                                                                         

• Ultra-Low Qg and Qgd

• Low Thermal Resistance

• Avalanche Rated

• Pb-Free Terminal Plating                                                  

• RoHS Compliant

• Halogen Free

• SON 5-mm × 6-mm Plastic Package

 

 

 

 

APPLICATIONS

• Primary Side Telecom

• Secondary Side Synchronous Rectifier

• Motor Control 

 

 

 

 

DESCRIPTION

This 100 V, 7.8 mΩ, SON 5 mm x 6 mm NexFET™

power MOSFET is designed to minimize losses in

power conversion applications.

 

 

 

 

 

 

Q5A Tape and Reel Information

 

 

Notes:

1. 10-sprocket hole-pitch cumulative tolerance ±0.2

2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm

3. Material: black static-dissipative polystyrene

4. All dimensions are in mm (unless otherwise specified)

5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket

 

Product Tags: power mosfet ic   silicon power transistors  
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