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Complementary Silicon Power Ttransistors BD139

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Complementary Silicon Power Ttransistors BD139

Model Number BD139
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 8000
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32-3
Collector-Base Voltage 80V
Collector-Emitter Voltage 80V
Emitter-Base Voltage 5V
Collector Current 1.5A
Detailed Product Description

 

Complementary Silicon Power Ttransistors  BD139 / BD140

 

DESCRIPTION

It is intented for use in power amplifier and switching applications.

 

 

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

             Parameter      l   Value  Unit
  Collector-Base Voltage  VCBO   80   V
  Collector-Emitter Voltage  VCEO   80   V
  Emitter-Base Voltage  VEBO    5   V
  Collector Current   IC   1.5   A
  Base Current   IB   0.5   A
  Total Dissipation at  Ptot   12.5   W
 Max. Operating Junction  Temperature  Tj   150   oC
  Storage Temperature  Tstg -55~150oC   oC

 

 

 

ELECTRICAL CHARACTERISTICS  ( Ta = 25 oC) 

             Parameter  Symbol     Test Conditions   Min.  Typ.  Max.   Unit
  Collector Cut-off Current   ICEO  VCB=80V, IE=0  --  --  10  uA
  Emitter Cut-off Current   IEBO  VEB=5V, IC=0  --  --  10  uA
  Collector-Emitter Sustaining Voltage   VCEO  IC=30mA, IB=0  80  --  --  V
  DC Current Gain

   hFE(1)

   hFE(2)

  VCE=2V, IC=0.5A

  VCE=2V, IC=150mA

  25

  40

  --

  --

  --

  250

 
  Collector-Emitter Saturation Voltage   VCE(sat)  IC=0.5A,IB=50mA  --  --  0.5  V
  Base-Emitter Saturation Voltage   VBE(sat)  VCE=2V,IC=0.5A  --  --  1.0  V
  Current Gain Bandwidth Product    fT  VCE=10V,IC=500mA  3  --  --  MHz

 

 

 

 

 

 

 

Product Tags: power mosfet ic   multi emitter transistor  
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