Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	BSP315
Certification	Original Factory Pack
Place of Origin	China
Minimum Order Quantity	20pcs
Price	Negotiation
Payment Terms	T/T , Western Union,PayPal
Supply Ability	6800PCS
Delivery Time	1 Day
Packaging Details	please contact me for details
Description	P-Channel 50 V 1A 1.8W Surface Mount SOT-223
Main Line	Ic,module,transistor,diodes,capacitor,resistor Etc
Features	P channel
Features2	Enhancement mode
Features3	• Logic Level
Features4	VGS(th) = -0.8...-2.0 V
Package	SOT-23

Detailed Product Description

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

• P channel

• Enhancement mode

• Logic Level

• VGS(th) = -0.8...-2.0 V

Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )

Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T

Maximum Ratings

Parameter	Symbol	Values	Unit
Drain source voltage	V_DS	-50	V
Drain-gate voltage RGS = 20 kΩ	V_DGR	-50
Gate source voltage	V_GS	± 20
Continuous drain current TA = 39 °C	I_D	-1.1	A
DC drain current, pulsed TA = 25 °C	I_Dpuls	-4.4	A
Power dissipation TA = 25 °C	P_tot	1.8	W

Product Tags: power mosfet ic silicon power transistors

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