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60APU06 Power Mosfet Transistor Ultrafast Soft Recovery Diode, 60 A FRED PtTM

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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60APU06 Power Mosfet Transistor Ultrafast Soft Recovery Diode, 60 A FRED PtTM

Model Number 60APU06
Certification new & original
Place of Origin original factroy
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 7600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Diode 600 V 60A Through Hole TO-247AC
Junction capacitance 39 pF
Breakdown voltage, blocking voltage 600 V
Cathode to anode voltage 600 V
Continuous forward current 60 A
Maximum repetitive forward current 120 A
Operating junction and storage temperatures - 55 to 175 °C
Detailed Product Description

 

Ultrafast Soft Recovery Diode, 60 A FRED PtTM

 

FEATURES

• Ultrafast recovery

• 175 °C operating junction temperature

• Designed and qualified for industrial level

 

BENEFITS

• Reduced RFI and EMI

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

 

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems.

The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.

 

 

     TO-247AC (modified)        TO-247AC

 

PRODUCT SUMMARY

trr (typical)34 ns
IF(AV)60 A
VR600 V

 

ABSOLUTE MAXIMUM RATINGS

PARAMETERSYMBOLTEST CONDITIONSMAX.UNITS
Cathode to anode voltageVR 600V
Continuous forward currentIF(AV)TC = 116 °C60A
Single pulse forward currentIFSMTC = 25 °C600A
Maximum repetitive forward currentIFRMSquare wave, 20 kHz120A
Operating junction and storage temperaturesTJ, TStg - 55 to 175°C

 

 

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Product Tags: power mosfet ic   multi emitter transistor  
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