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BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch

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BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch

Model Number BTS432E2
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 7900pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Power Switch/Driver 1:1 N-Channel 9A PG-TO220-5-3
Supply voltage 63 V
Operating temperature range -40 to +150 °C
Storage temperature range -55 to +150 °C
Power dissipation (DC) 125 w
Electrostatic discharge capability (ESD) (Human Body Model) 2.0 kV
Input voltage (DC) -0.5 to +6 V
Detailed Product Description

 

PROFET® BTS 432 E2

Smart Highside Power Switch

 

Features

• Load dump and reverse battery protection1)

• Clamp of negative voltage at output

• Short-circuit protection

• Current limitation

• Thermal shutdown

• Diagnostic feedback

• Open load detection in ON-state

• CMOS compatible input

• Electrostatic discharge (ESD) protection

• Loss of ground and loss of Vbb protection2)

• Overvoltage protection

• Undervoltage and overvoltage shutdown with autorestart and hysteresis

 

Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

• All types of resistive, inductive and capacitve loads

• Replaces electromechanical relays and discrete circuits

 

Product Summary

VLoad dump                                               80 V

Vbb-VOUT Avalanche Clamp                     58 V

Vbb (operation)                               4.5 ... 42 V

Vbb (reverse)                                           -32 V

RON                                                        38 mΩ

IL(SCp)                                                       44 A

IL(SCr)                                                        35 A

IL(ISO)                                                         11 A

 

 

 

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.

 

 

Maximum Ratings at Tj = 25 °C unless otherwise specified

ParameterSymbolValuesUnit
Supply voltageVbb63V

Load dump protection VLoadDump = UA + Vs, UA = 13.5 V

RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high

Vs 3)66.5V
Load currentILself-limitedA

Operating temperature range

Storage temperature range

Tj

Tstg

-40 ...+150

-55 ...+150

°C
Power dissipation (DC)Ptot125W

Inductive load switch-off energy dissipation,

single pulse Tj=150 °C:

 

EAS

 

1.7

 

J

Electrostatic discharge capability (ESD) (Human Body Model)VESD2.0kV

Input voltage (DC)

Current through input pin (DC)

Current through status pin (DC)

VIN

IIN

IST

-0.5 ... +6

±5.0

±5.0

V

mA

 

Thermal resistance                    chip - case:

                         junction - ambient (free air):

                     SMD version, device on pcb4):

RthJC

RthJA

 

≤ 1

≤ 75

≤ tbd

K/W

 

Package and Ordering Code

All dimensions in mm

 

 

 

 

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Product Tags: power mosfet ic   multi emitter transistor  
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