BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch
|
PROFET® BTS 432 E2 Smart Highside Power Switch
Features • Load dump and reverse battery protection1) • Clamp of negative voltage at output • Short-circuit protection • Current limitation • Thermal shutdown • Diagnostic feedback • Open load detection in ON-state • CMOS compatible input • Electrostatic discharge (ESD) protection • Loss of ground and loss of Vbb protection2) • Overvoltage protection • Undervoltage and overvoltage shutdown with autorestart and hysteresis
Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits
Product Summary VLoad dump 80 V Vbb-VOUT Avalanche Clamp 58 V Vbb (operation) 4.5 ... 42 V Vbb (reverse) -32 V RON 38 mΩ IL(SCp) 44 A IL(SCr) 35 A IL(ISO) 11 A
General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.
Maximum Ratings at Tj = 25 °C unless otherwise specified
Package and Ordering Code All dimensions in mm
Stock Offer (Hot Sell)
|
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Product Tags: power mosfet ic multi emitter transistor |