200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF

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Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo View Contact Details

200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF

Model Number	IRFP260NPBF
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	9200pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247AC
Pulsed Drain Current	200 A
Power Dissipation	300 W
Linear Derating Factor	2.0 W/°C
Gate-to-Source Voltage	±20 V
Single Pulse Avalanche Energy	560 mJ
Avalanche Current	50 A

Detailed Product Description

IRFP260NPbF HEXFET® Power MOSFET

• Advanced Process Technology

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Ease of Paralleling

• Simple Drive Requirements

• Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	50	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	35	A
I_DM	Pulsed Drain Current	200	A
P_D @T_C = 25°C	Power Dissipation	300	A
	Linear Derating Factor	2.0	W/°C
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	560	mJ
I_AR	Avalanche Current	50	A
E_AR	Repetitive Avalanche Energy	30	mJ
dv/dt	Peak Diode Recovery dv/dt	10	V/ns
T_J,T_STG	Operating Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbfïin (1.1Nïm)

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

LM2662MX	5344	TI	16+	SOP-8
LM2663M	6856	NS	16+	SOP-8
LM2675MX-5.0	5274	TI	16+	SOP-8
LM2675MX-ADJ	5415	TI	15+	SOP-8
LM2734YMK	12799	TI	16+	SOT23-6
LM2767M5X	6927	NSC	16+	SOT23-5
LM2825N-ADJ	1525	NSC	06+	DIP-24
LM2842YMK-ADJL	4655	TI	16+	SOT23-6
LM285MX-1.2	5929	NS	16+	SOP-8
LM2901DR2G	104000	ON	13+	SOP
LM2902DR2G	77000	ON	15+	SOP
LM2903DR2G	107000	ON	15+	SOP
LM2903IMX	13191	FSC	11+	SOP-8
LM2904DR2G	82000	ON	16+	SOP-8
LM2904MX	11700	NS	15+	SOP-8
LM2904P	20000	TI	16+	TSSOP-8
LM2904QPWRQ1	6065	TI	14+	TSSOP-8
LM2907N-8	8781	NS	97+	DIP-8
LM2917N-8	6580	NS	13+	DIP-8
LM2931AD-5.0R2G	19723	ON	16+	SOP-8
LM2931CDR2G	14829	ON	16+	SOP-8
LM2931CDR2G	10000	ON	15+	SOP-8
LM2936MPX-3.3	9351	TI	14+	SOT-223
LM2936Z-5.0	3406	NS	05+	TO-92
LM2937ESX-3.3	9135	NSC	07+	TO-263
LM2937IMPX-3.3	1862	TI	16+	SOT-223
LM2940CSX-5.0	8095	NS	14+	TO-263
LM2940S-5.0	10367	NS	16+	TO-263
LM2940SX-5.0	8852	NS	15+	TO-263
LM2941CT	5900	NS	00+	TO-220

Product Tags: power mosfet ic silicon power transistors

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