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IRL3713PBF Power Mosfet Transistor electrical ic HEXFET Power MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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IRL3713PBF Power Mosfet Transistor electrical ic HEXFET Power MOSFET

Model Number IRL3713PBF
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 8300pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 30 V 260A (Tc) 330W (Tc) Through Hole TO-220AB
Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 1040 A
Linear Derating Factor 2.2 W/°C
Junction Temperature -55 to +175°C
Storage Temperature -55 to +175°C
Detailed Product Description

 

IRL3713PbF IRL3713SPbF IRL3713LPbF 

HEXFET Power MOSFET

 

SMPS MOSFET

 

Applications

  • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
  • High Frequency Buck Converters for Computer Processor Power
  • 100% RG Tested
  • Lead-Free

 

Benefits

  • Ultra-Low Gate Impedance
  • Very Low RDS(on) at 4.5V VGS
  • Fully Characterized Avalanche Voltage and Current

 

Absolute Maximum Ratings

SymbolParameterMaxUnits
VDSDrain-Source Voltage30V
VGSGate-to-Source Voltage± 20V
ID @ TC = 25°CContinuous Drain Current, VGS @ 10V260A
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V180A
IDMPulsed Drain Current1040A
PD @TC = 25°CMaximum Power Dissipation330W
PD @TC = 100°CMaximum Power Dissipation170W
 Linear Derating Factor2.2W/°C
TJ, TSTGJunction and Storage Temperature Range-55 to +175°C

 

 

 

 

 

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Product Tags: power mosfet ic   multi emitter transistor  
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