BC807-25 Power Mosfet Transistor PNP general purpose transistor

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

BC807-25 Power Mosfet Transistor PNP general purpose transistor

Model Number	BC807-25
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	7800pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Bipolar (BJT) Transistor PNP 45 V 500 mA 100MHz 300 mW Surface Mount SOT-23
collector-base voltage	−50 V
collector-emitter voltage	−45 V
emitter-base voltage	−5 V
collector current (DC)	−500 mA
peak base current	−200 mA
total power dissipation	250 mW

Detailed Product Description

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

5M0380R	2882	FSC	14+	TO-220
AT24C04	2882	ATMEL	14+	SOP8
HT1381	2882	HOLTEK	14+	SOP8
L293E	2887	ST	16+	DIP
BZX84B5V1	2888	ON	16+	SOT-23
TLP523-4	2888	TOSHIBA	13+	DIP-16
TPS63020DSJR	2888	TI	15+	QFN
KBP210	2896	SEP	16+	DIP
MP1542DK-LF-Z	2900	MPS	16+	MSOP8
STU3030	2900	SAMHOP	14+	TO-252
IRS2092S	2978	IR	14+	SOP16
SMBJ36A	2980	VISHAY	14+	DO-214AA
A6259	2988	SANKEN	16+	DIP
IRF7309TRPBF	2990	IR	16+	SOP8
PIC16F877-20I/L	2990	MICROCHIP	13+	PLCC44
IRFBE30P	2997	IR	15+	TO-220
MUR1640CT	2998	ON	16+	TO-220
1.5KE15A	3000	VISHAY	16+	DO-201AD
1.5KE6.8CA	3000	VISHAY	14+	DO-201AD
1N5359B	3000	ON	14+	DO-27
1N5819HW-7-F	3000	DIODES	14+	SOD-123
2N7002W-7-F	3000	DIODES	16+	SOT-323
74HC1G04GW	3000		16+	SOT-353
BD136	3000	ST	13+	TO-126
BF620	3000		15+	SOT-89
BZD27C13	3000	VISHAY	16+	SOD123
BZX84-C12	3000		16+	SOT23
CAT810LTBI	3000	ON	14+	SOT23-3
DF01S	3000	VISHAY	14+	SOP4
DTC124EU	3000	ROHM	14+	SOT323

BC807 PNP general purpose transistor

FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).

APPLICATIONS
• General purpose switching and amplification.

Fig.1 Simplified outline (SOT23) and symbol.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC817.

PINNING

PIN	DESCRIPTION
1	base
2	emitter
3	collector

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	−	−50	V
V_CEO	collector-emitter voltage	open base; I_C = −10 mA	−	−45	V
V_EBO	emitter-base voltage	open collector	−	−5	V
I_C	collector current (DC)		−	−500	mA
I_CM	peak collector current		−	−1	A
I_BM	peak base current		−	−200	mA
P_tot	total power dissipation	Tamb ≤ 25 °C; note 1	−	250	mW
T_stg	storage temperature		−65	+150	°C
T_j	junction temperature		−	150	°C
T_amb	operating ambient temperature		−65	+150	°C

Note 1. Transistor mounted on an FR4 printed-circuit board.

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

Product Tags: power mosfet ic multi emitter transistor

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