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P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

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P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

Model Number P4NK60ZFP
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 8760pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 600 V 4A (Tc) 25W (Tc) Through Hole TO-220FP
Drain-source Voltage 600 V
Drain-gate Voltage 600 V
Gate- source Voltage ± 30 V
Peak Diode Recovery voltage slope 4.5 V/ns
Insulation Withstand Voltage 2500 V
Operating Junction Temperature -55 to 150 °C
Detailed Product Description

 

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STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1

STB4NK60Z-STD4NK60Z-STD4NK60Z-1

 

N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK

Zener-Protected SuperMESH™Power MOSFET

 

■ TYPICAL RDS(on) = 1.76 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING REPEATIBILITY

 

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

 

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

■ LIGHTING

 

ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit

STP4NK60Z

STB4NK60Z

STB4NK60Z-1

STP4NK60ZFP

STD4NK60Z

STD4NK60Z-1

VDSDrain-source Voltage (VGS = 0)600V
VDGRDrain-gate Voltage (RGS = 20 kΩ)600V
VGSGate- source Voltage± 30V
IDDrain Current (continuous) at TC = 25°C44 (*)4A
IDDrain Current (continuous) at TC = 100°C2.52.5 (*)2.5A
IDM (•)Drain Current (pulsed)1616 (*)16A
PTOTTotal Dissipation at TC = 25°C702570W
 Derating Factor0.560.20.56W/°C
VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)3000V
dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
VISOInsulation Withstand Voltage (DC)-2500-V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150

°C

(•) Pulse width limited by safe operating area

(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

 

 

 

 

 

Product Tags: power mosfet ic   multi emitter transistor  
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