STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT
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STGP7NC60HD STGF7NC60HD - STGB7NC60HD
N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH™ IGBT
■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
APPLICATIONS ■ HIGH FREQUENCY INVERTERS ■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ MOTOR DRIVERS
Absolute Maximum ratings
(1) Pulse width limited by max. junction temperature.
Figure 1: Package
Figure 2: Internal Schematic Diagram
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Product Tags: power mosfet ic multi emitter transistor |