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IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH

Model Number IRFP4229PBF
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 7600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description MOSFET N-CH 250V 44A TO247AC
Gate-to-Source Voltage ±30 V
Pulsed Drain Current 180 A
Repetitive Peak Current 87 A
Power Dissipation 310 W
Linear Derating Factor 2.0 W/°C
Soldering Temperature for 10 seconds 300 °C
Detailed Product Description

 

IRFP4229PbF PDP SWITCH

 

Features

• Advanced Process Technology

• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

• Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

• Low QG for Fast Response

• High Repetitive Peak Current Capability for Reliable Operation

• Short Fall & Rise Times for Fast Switching

• 175°C Operating Junction Temperature for Improved Ruggedness

• Repetitive Avalanche Capability for Robustness and Reliability

 

Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

 

Absolute Maximum Ratings

 ParameterMax.Units
VGSGate-to-Source Voltage±30V
ID @ TC = 25°CContinuous Drain Current, VGS @ 10V44A
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V31A
IDMPulsed Drain Current180A
IRP @ TC = 100°CRepetitive Peak Current87A
PD @TC = 25°CPower Dissipation310W
PD @TC = 100°CPower Dissipation150W
 Linear Derating Factor2.0W/°C
TJ , TSTGOperating Junction and Storage Temperature Range-40 to + 175°C
 Soldering Temperature for 10 seconds300°C
 Mounting Torque, 6-32 or M3 Screw10lbin (1.1Nm)N

 

 

 

 

 

Stock Offer (Hot Sell)

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Product Tags: power mosfet ic   silicon power transistors  
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