IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH
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IRFP4229PbF PDP SWITCH
Features • Advanced Process Technology • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications • Low QG for Fast Response • High Repetitive Peak Current Capability for Reliable Operation • Short Fall & Rise Times for Fast Switching • 175°C Operating Junction Temperature for Improved Ruggedness • Repetitive Avalanche Capability for Robustness and Reliability
Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Stock Offer (Hot Sell)
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Product Tags: power mosfet ic silicon power transistors |
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