BYV26EGP-E3/73 Power Mosfet Transistor Glass Passivated Ultrafast Rectifier

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

BYV26EGP-E3/73 Power Mosfet Transistor Glass Passivated Ultrafast Rectifier

Model Number	BYV26EGP-E3/73
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	Western Union, T/T, MoneyGram
Supply Ability	5000pcs
Packaging Details	Please contact me for details
Description	Diode 1000 V 1A Through Hole DO-204AC (DO-15)
VDD POWER	1000 V
Package	2.5V
Max working temperature	75 ns
Min working temertature	1A
series	30A
factory packing quantity	5 uA

Detailed Product Description

BYV26EGP-E3/73 Glass Passivated Ultrafast Rectifier

FEATURES

Cavity-free glass-passivated junction

Ultrafast reverse recovery time

Low forward voltage drop

Low switching losses, high efficiency

High forward surge capability

Meets environmental standard MIL-S-19500 • Solder dip 260 °C, 40 s

Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication.

MECHANICAL DATA

Case: DO-204AC, molded epoxy over glass body Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER	SYMBOL	BYV26DGP	BYV26EGP	UNIT
Maximum repetitive peak reverse voltage	VRRM	800	1000	V
Maximum RMS voltage	VRMS	560	700	V
Maximum DC blocking voltage	VDC	800	1000	V
Maximum average forward rectified current 0.375" (9.5 mm) lead leCM GROUPh (Fig. 1)	IF(AV)	1.0		A
Peak forward surge current 10 ms single half sine-wave superimposed on rated load	IFSM	30		A
Non repetitive peak reverse energy (1)	ERSM	10		mj
Operating junction and storage temperature range	TJ,TSTG	- 65 to + 175		°C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER	TEST CONDITIONS		SYMBOL	BYV26DGP	BYV26EGP	UNIT
Minimum avalanche breakdown voltage	100 µA	VBR		900	1100	V
Maximum instantaneous forward voltage	1.0 A	TJ = 25 °C TJ = 175 °C	VF	2.5 1.3		V
Maximum instantaneous forward voltage	1.0 A	TJ = 25 °C TJ = 175 °C	VF	2.5 1.3
Maximum DC reverse current at rated DC blocking voltage		TA = 25 °C TA = 165 °C	IR	5.0 150		µA
Max. reverse recovery time	F = 0.5 A, IR = 1.0 A, Irr = 0.25 A		trr	75		ns
Typical junction capacitance	4.0 V, 1 MHz		CJ	15		pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BYV26DGP

BYV26EGP

UNIT

Typical thermal resistance (1)(2)

RθJA

RθJL

°C/W

Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead leCM GROUPh, mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads (2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead leCM GROUPh with both leads attached to heatsink

ORDERING INFORMATION (Example)
PREFERRED P/N	UNIT WEIGHT (g)	PREFERRED PACKAGE CODE	BASE QUANTITY	DELIVERY MODE
BYV26EGPE3/54	0.428	54	4000	13" diameter paper tape and reel
BYV26EGPE3/73	0.428	73	2000	Ammo pack packaging
BYV26EGPHE3/54(1)	0.428	54	4000	13" diameter paper tape and reel
BYV26EGPHE3/73(1)	0.428	73	2000	Ammo pack packaging

Note: (1) Automotive grade AEC Q101 qualified

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