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CNY74-2H silicon power transistors Multichannel Optocoupler with Phototransistor Output

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

CNY74-2H silicon power transistors Multichannel Optocoupler with Phototransistor Output

Model Number	CNY74-2
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	8200pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Optoisolator Transistor Output 5300Vrms 2 Channel 8-DIP
Reverse voltage	6V
Forward current	60mA
Forward surge current	1.5A
Power dissipation	100mW
Junction temperature	125°C
Forward voltage	1.6V

Detailed Product Description

CNY74-2 Power Mosfet Transitor Multichannel Optocoupler with Phototransistor Output

Description

The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications

Galvanically separated circuits, non-interacting switches

Features

CNY74-2H includes 2 isolater channels

CNY74-4H includes 4 isolater channels

Isolation test voltage VIO = 5 kV

Test class 25/100/21 DIN 40 045

Low coupling capacitance of typical 0.3 pF Current Transfer Ratio (CTR) of typical 100% Low temperature coefficient of CTR

Wide ambient temperature range

Underwriters Laboratory (UL) 1577 recognized, file number E-76222

CSA (C–UL) 1577 recognized, file number E-76222 – Double Protection

Coupling System U

Order Instruction

Ordering Code	CTR Ranking	Remarks
CNY74–2H	50 to 600%	8 Pin = Dual channel
CNY74–4H	50 to 600%	16 Pin = Quad channel

Absolute Maximum Ratings Input (Emitter)

Input (Emitter)

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		VR	6	V
Forward current		IF	60	mA
Forward surge current	tp ≤ 10s	IFSM	1.5	A
Power dissipation	Tamb ≤ 25C	PV	100	mW
Junction temperature		Tj	125	°C

Output (Detector)

Parameter	Test Conditions	Symbol	Value	Unit
Collector emitter voltage		VCEO	70	V
Emitter collector voltage		VECO	7	V
Collector current		IC	50	mA
Peak collector current	tp/T = 0.5, tp ≤ 10 ms	ICM	100	mA
Power dissipation	Tamb ≤ 25C	PV	150	mW
Junction temperature		Tj	125	°C

Coupler

Parameter	Test Conditions	Symbol	Value	Unit
AC isolation test voltage (RMS)	t = 1 min	VIO 1)	5	kV
Total power dissipation	Tamb ≤ 25C	Ptot	250	mW
Ambient temperature range		Tamb	–40 to +100	°C
Storage temperature range		Tstg	–55 to +125	°C
Soldering temperature		Tsd	260	°C
1) Related to standard climate 23/50 DIN 50014

Electrical Characteristics (Tamb = 25°C)

Input (Emitter)

Parameter	Test Conditions	Symbol	Min.	Typ.	Max.	Unit
Forward voltage	IF = 50 mA	VF		1.25	1.6	V

Output (Detector)

Parameter	Test Conditions	Symbol	Min	Max.	Unit
Collector emitter voltage	IC = 1 mA	VCEO	70		V
Emitter collector voltage	IE = 100 A	VECO	7		V
Collector dark current	VCE = 20 V, IF = 0, E = 0	ICEO		100	nA

Coupler

Parameter	Test Conditions	Symbol	Min.	Typ.	Max.	Unit
DC isolation test voltage	t = 2 s	VIO1)	5			kV
Isolation resistance	VIO = 1000 V, 40% relative humidity	RIO1)		1012		Ω
Collector emitter saturation voltage	IF = 10 mA, IC = 1 mA	VCEsat			0.3	V
Cut-off frequency	VCE = 5 V, IF = 10 mA, RL = 100	fc		100		kHz
Coupling capacitance	f = 1 MHz	Ck		0.3		pF
1) Related to standard climate 23/50 DIN 50014

Current Transfer Ratio (CTR)

Parameter	Test Conditions	Type	Symbol	Min.	Typ.	Max.	Unit
IC/IF	VCE = 5 V, IF = 5 mA		CTR	0.5	1.0	6.0
IC/IF	VCE = 5 V, IF = 10 mA		CTR	0.6	1.2

Switching Characteristics

Parameter	Test Conditions	Symbol	Typ.	Unit
Delay time	VS = 5 V, IC = 2 mA, RL = 100 (see figure 1)	td	3.0	μS
Rise time		tr	3.0	μS
Fall time		tf	4.7	μS
Storage time		ts	0.3	μS
Turn-on time		ton	6.0	μS
Turn-off time		toff	5.0	μS
Turn-on time	VS = 5 V, IF = 10 mA, RL = 1 k (see figure 2)	ton	9.0	μS
Turn-off time	VS = 5 V, IF = 10 mA, RL = 1 k (see figure 2)	toff	18.0	μS

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