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MJL21193 MJL21194 power mosfet module Silicon Power Transistors

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

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MJL21193 MJL21194 power mosfet module Silicon Power Transistors

Model Number MJL21193 MJL21194
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor PNP 250 V 16 A 4MHz 200 W Through Hole TO-264
Collector–Emitter Voltage 250 V
Collector–Base Voltage 400 V
Emitter–Base Voltage 5 V
Base Current – Continuous 5 A
Total Power Dissipation 200 W
Operating and Storage Junction Temperature –65 to +150 °C
Detailed Product Description

 

Silicon Power Transistors

PNP MJL21193

NPN MJL21194

 

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

250 VOLTS

200 WATTS

 

The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

 

• Total Harmonic Distortion Characterized

• High DC Current Gain – hFE = 25 Min @ IC = 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

 

MAXIMUM RATINGS

RatingSymbolValueUnit
Collector–Emitter VoltageVCEO250Vdc
Collector–Base VoltageVCBO400Vdc
Emitter–Base VoltageVEBO5Vdc
Collector–Emitter Voltage – 1.5 VVCEX400Vdc

Collector Current — Continuous

                                   Peak (1)

IC

16

30

Adc
Base Current – ContinuousIB5Adc

Total Power Dissipation @ TC = 25°C

   Derate Above 25°C

PD

200

1.43

Watts

W/°C

Operating and Storage Junction Temperature RangeTJ, Tstg–65 to +150°C

(1) Pulse Test: Pulse Width = 5.0 µs, Duty Cycle ≤10%.

 

 

 

 

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Product Tags: power mosfet ic   silicon power transistors  
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