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BUK9508-55A Power Mosfet Transistor TrenchMOS logic level FET

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

BUK9508-55A Power Mosfet Transistor TrenchMOS logic level FET

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Model Number BUK9508-55A
Certification new & original
Place of Origin original factory
Minimum Order Quantity 50pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 55 V 75A (Tc) 253W (Tc) Through Hole TO-220AB
drain-source voltage (DC) 55 V
drain-gate voltage (DC) 55 V
gate-source voltage (DC) ±15 V
peak drain current 503 A
total power dissipation 253 W
storage temperature −55 to +175 °C
Detailed Product Description

 

BUK95/9608-55A

TrenchMOS™ logic level FET

 

 

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

 

Product availability:

BUK9508-55A in SOT78 (TO-220AB)

BUK9608-55A in SOT404 (D2-PAK).

 

Features

■ TrenchMOS™ technology

■ Q101 compliant

■ 175 °C rated

■ Logic level compatible.

 

Applications

■ Automotive and general purpose power switching:

  ♦ 12 V and 24 V loads

  ♦ Motors, lamps and solenoids.

 

Quick reference data

SymbolParameterConditionsTypMaxUnit
VDSdrain-source voltage (DC) -55V
IDdrain current (DC)Tmb = 25 °C; VGS = 5 V-125A
Ptottotal power dissipationTmb = 25 °C-253W
Tj  -175°C
RDSondrain-source on-state resistanceTj = 25 °C; VGS = 5 V; ID = 25 A6.88mΩ
Tj = 25 °C; VGS = 4.5 V; ID = 25 A-8.5mΩ
Tj = 25 °C; VGS = 10 V; ID = 25 A6.47.5mΩ

 

Simplified outline                                                                            Symbol

 

 

 

 

 

Stock Offer (Hot Sell)

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Product Tags: power mosfet ic   silicon power transistors  
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