IRFBC40 Power Mosfet Transistor N-Channel Power MOSFETs Switch Mode

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	IRFBC40
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	10000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	N-Channel 600 V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB
Pulsed Drain Current	25 A
Power Dissipation	125 W
Linear Derating Factor	1.0 W/°C
Gate-to-Source Voltage	± 30 V
Peak Diode Recovery dv/dt	6.0 V/ns
Operating Junction and Storage Temperature	-55 to + 150°C

Detailed Product Description

SMPS MOSFET IRFBC40A

HEXFET® Power MOSFET

Applications

• Switch Mode Power Supply ( SMPS )

• Uninterruptable Power Supply

• High speed power switching

Benefits

• Low Gate Charge Qg results in Simple Drive Requirement

• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage and Current

• Effective Coss Specified ( See AN 1001)

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	6.2	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	3.9	A
I_DM	Pulsed Drain Current	25	A
P_D @T_C = 25°C	Power Dissipation	125	W
	Linear Derating Factor	1.0	W/°C
V_GS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	6.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)

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Product Tags: power mosfet ic multi emitter transistor

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