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irf740pbf power mosfet transistors
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Product Description: The RURG8060 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping ...
2024-12-09 23:34:13
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Product Description: IGBT Power Module: Driving High Power Applications with Efficiency and Reliability Overview The IGBT Power Module is a high...
2024-12-09 23:34:13
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PS21765 Intelligent Power Module Power Module 20A 600V DIP-IPM Small Motor Control Applications ► Refrigerators ► Air Conditioners ► Small Servo ...
2024-12-09 22:06:54
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... Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors ...
2024-12-09 22:07:10
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... 200A 1200V High Power Switching Use Insulated Type Description: Mitsubishi IGBT Modules are designed for use in switching applications.Each module ...
2025-07-24 00:26:12
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62mmC-SeriesmodulewithfastTrench/FieldstopIGBT4andEmitterControlledHEdiode FF450R12KT4 Power Transistor Module N-CH 1.2KV 580A FastTrench/FieldstopIGB...
2024-12-09 22:07:10
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...Power Conversion • Automotive Systems • Industrial Power Systems • Distributed Power Systems • Battery Powered Systems > Features • 120μA Quiescent ...
2024-12-09 22:07:10
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IKW40N120H3 IKW40N120CS6 IKW75N65ES5 IKW75N65EH5 Insulated Gate Bipolar Transistor Applications •uninterruptiblepowersupplies •weldingconverters ...
2024-12-09 22:06:54
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... • 3.5-V to 42-V Input Voltage Range • 200-mΩ High-Side MOSFET • High Efficiency at Light Loads With a Pulse Skipping Eco-Mode™ • 138-μA Operating ...
2024-12-09 22:07:10
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Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • ...
2024-12-09 22:06:54
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