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irf3205pbf npn power transistors
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62mmC-SeriesmodulewithfastTrench/FieldstopIGBT4andEmitterControlledHEdiode FF450R12KT4 Power Transistor Module N-CH 1.2KV 580A FastTrench/FieldstopIGB...
2024-12-09 22:07:10
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Product Description: IGBT Power Module: Driving High Power Applications with Efficiency and Reliability Overview The IGBT Power Module is a high...
2024-12-09 23:34:13
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... Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors ...
2024-12-09 22:07:10
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... 200A 1200V High Power Switching Use Insulated Type Description: Mitsubishi IGBT Modules are designed for use in switching applications.Each module ...
2025-07-24 00:26:12
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IRFP064NPBF N-Channel Mosfet 55V 98A 8mOhm 113.3nCAC TO-247-3 Specifications Product Attribute Attribute Value Product Category: MOSFET Technology: Si ...
2024-12-09 23:34:13
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L78M12CDT-TR Linear Voltage Regulators L78M12 PMIC 12V 500mA Positive SMD DPAK Specifications Product Attribute Attribute Value Manufacturer: ...
2024-12-09 22:07:10
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NVMTS1D2N08H 80V 337A 1.1mOhms DFNW-8 AEC-Q101 N-Channel MOSFET Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize ...
2024-12-09 23:34:13
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...NPN transistor polarity Electronic Component 1 Features • Characterized for Use to 300 mA • High-Voltage Outputs up to 30 V • No Output Latch-Up at ...
2024-12-09 23:34:13
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IKW40N120H3 IKW40N120CS6 IKW75N65ES5 IKW75N65EH5 Insulated Gate Bipolar Transistor Applications •uninterruptiblepowersupplies •weldingconverters ...
2024-12-09 22:06:54
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Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • ...
2024-12-09 22:06:54
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