Mosfet Power Transistor TPH2R306NH1
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Mosfet Power Transistor TPH2R306NH1,LQ Toshiba Automotive 190A 60V 1.9 MOhms U-MOS Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Description Toshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed gate threshold voltage range of 2.5V to 3.5V, which reduces switching time tolerance. Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Small output charge: Qoss = 91 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.9 m Ω (typ.) (VGS =
10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, I D = 1.0 mA) Specifications
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Product Tags: Mosfet Power Transistor TPH2R306NH1 TPH2R306NH1 automotive transistor |
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