MT41K128M16JT-125 Memory DDR3L SDRAM IC 2Gbit Parallel 800MHz FBGA96
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MT41K128M16JT-125 Memory IC SDRAM DDR3L 2Gbit Parallel 800 MHz 13.75ns FBGA96
Specifications
Description
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. • Automatic self refresh (ASR) • Write leveling • Multipurpose register • Output driver calibration
Key Timing Parameters
Features
• VDD = VDDQ = 1.35V (1.283 –1.45V) • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable posted CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C • Self refresh temperature (SRT)
Trading Guides
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| Product Tags: SDRAM IC 2Gbit MT41K128M16JT-125 SDRAM IC Memory IC Chip 2Gbit |
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