China Semiconductor IC Chip manufacturer
Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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surface mount mosfet power electronics

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surface mount mosfet power electronics

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... (ID) of 9.4A Low On-Resistance (RDS(on)) of 0.27 ohms Fast switching speed TO-252 (DPAK) package RoHS compliant This MOSFET is ideal for use in ... 2024-12-09 22:28:51
...MOSFET Transistor 2. Part Number: IRLR2905TRPBF 3. Package Type: TO-220 4. Configuration: Single 5. Voltage: 100V 6. Current: 8A 7. Power ... 2024-12-09 22:28:51
...: TO-220 • P-D-S: 100V, 16A, 0.0075Ω • Mounting Type: Through Hole Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and ... 2024-12-09 22:28:51
...MOSFET Voltage: 100V Current: 13A Drain-Source On-Resistance: 0.088 Ohm Rdson: 7.2mOhm Static Drain-Source Breakdown Voltage: 100V Gate-Source ... 2024-12-09 22:28:51
...MOSFET Parameters: • Vds (max): 55V • Rds (on): 0.0075Ω • Ids (max): 110A • Package: TO-220AB • Gate charge (typical): 55nC • Power dissipation ... 2024-12-09 22:28:51
... from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, ... 2024-12-09 22:28:51
...MOSFET Package: TO-220 Drain-Source Voltage: 100V Continuous Drain Current: 60A Rds On: 0.065 Ohm Gate-Source Voltage: ±20V Power Dissipation: 150W ... 2024-12-09 22:28:51
...MOSFET Description: This MOSFET is a high-efficiency, high-performance, low-cost, high-reliability device with a wide range of applications. ... 2024-12-09 22:28:51
...MOSFET Transistor • Drain Source Voltage: 55V • Continuous Drain Current: 29A • RDS(on): 0.027 Ohm • Gate Threshold Voltage: 4V • Power Dissipation... 2024-12-09 22:28:51
...MOSFET Product Parameters: • Voltage: 100 V • Drain-Source On-Resistance: 16 mΩ • Drain-Source Breakdown Voltage: 100 V • Gate-Source Breakdown ... 2024-12-09 22:28:51
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