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surface mount mosfet power electronics
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... On-Resistance (RDS(ON)): 0.8 Ohm • Gate-Source Voltage (VGS): -4.5V to -5.5V • Continuous Drain Current (ID): 5.2A • Maximum Power Dissipation (PD...
2024-12-09 22:29:06
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...-Source Voltage: -20V - Gate-Source Voltage: -6V - Drain Current (continuous): -2A - Drain Current (pulsed): -5A - Power Dissipation: 1.5W ...
2024-12-09 22:29:06
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IRF9317TRPBF MOSFET Power Electronics: High Efficiency Low Loss High-Speed Switching Description: The IRF9317TRPBF is a 100V N-Channel Power MOSFET ...
2024-12-09 22:29:06
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...MOSFET Power Electronics SC-75 High Performance Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss...
2024-12-09 22:29:06
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...MOSFET Power Electronics TO-236-3 Transistor High Speed Switching Linear Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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...MOSFET Power Electronics P-Channel -5.2 A -30 V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) ...
2024-12-09 22:29:06
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...MOSFET Power Electronics SC-75 SMD High Performance Voltage Gate Charge RDS Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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...MOSFET Power Electronics N-Channel Enhancement Mode SC-75 600V 4.3A 17.3mΩ RDS FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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...MOSFET Power Electronics The FDS2582 is an N-Channel Enhancement Mode MOSFET designed for low voltage, high current switching applications. It has ...
2024-12-09 22:29:06
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...MOSFET Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal ...
2024-12-09 22:29:06
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