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surface mount mosfet power electronics
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...: 75V • Maximum Gate Source Voltage: 20V • Maximum Drain Current: 57A • Maximum Drain Source Resistance: 0.100ohm • Power Dissipation: 115W • ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Product Parameters: • Voltage Rating: 30V • Power Rating: 4.5W • Rds(on): 0.12ohm • Input Capacitance: 420pF • Pulsed ...
2024-12-09 22:29:06
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...: • Drain-Source Voltage: 100V • Gate-Source Voltage: ±20V • Drain Current: 45A • Continuous Drain Current: 45A • Power Dissipation: 120W • ...
2024-12-09 22:29:06
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...220 • Mounting Type: Through Hole • Maximum Gate Source Voltage: ±20V • RDS(on): 0.077ohm • Maximum Drain Source On-State Resistance: 0.08ohm • ......
2024-12-09 22:29:06
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...MOSFET Power Electronics Parameters: • Drain to Source Voltage (Vdss): 55V • Continuous Drain Current (Id): 48A • Gate to Source Voltage (Vgs): 20V ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Product Parameters: - Drain-Source Voltage (Vdss): 600V - Gate-Source Voltage (Vgs): ±20V - Continuous Drain Current (Id): ...
2024-12-09 22:29:06
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...MOSFET Features: - N-Channel enhancement mode - Low gate charge - Fast switching - Low on-state resistance - RoHS compliant Specifications: - Drain ...
2024-12-09 22:29:06
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...low on-resistance and low gate charge. It is ideal for power conversion applications such as inverters and DC/DC converters. It features a low ...
2024-12-09 22:29:06
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... high power switching, motor control, and other power electronics applications. This device features a low on-resistance of 0.058 Ω, ultra-low gate ...
2024-12-09 22:29:06
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MOSFET Power Electronics NVMFS5C646NLAFT1G Product Description: The MOSFET Power Electronics NVMFS5C646NLAFT1G is a N-channel MOSFET power electronics ...
2024-12-09 22:29:06
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