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surface mount mosfet power electronics
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IRFP460PBF High Performance 600V N Channel MOSFET for Power Electronics The IRFP460PBF is an advanced MOSFET designed to support a wide range of ...
2024-12-09 22:29:06
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Semiconductor FDMS7660 N-Channel PowerTrench® MOSFET for High-Efficiency Power Electronics Applications 8-PQFN 30V Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
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FDC637BNZ N-Channel Enhancement Mode MOSFET for High Efficiency Power Electronics Applications Technology MOSFET (Metal Oxide) Drain to Source Voltage ...
2024-12-09 22:29:06
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FDMC3612 N-Channel Enhancement Mode MOSFET for High Efficiency Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain ...
2024-12-09 22:29:06
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NTMFS5C410NLT1G - N-Channel Enhancement Mode MOSFET for Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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...-Source Voltage: 500V • Continuous Drain Current: 7.5A • Drain-Source On-Resistance: 0.028Ω • Gate-Source Voltage: ±20V • Power Dissipation: 16W • ...
2024-12-09 22:28:51
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...MOSFET High Performance High Efficiency Power Electronics Solution Product Features: -High-speed switching -High-voltage blocking -High-current ...
2024-12-09 22:28:51
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... Gate-to-Source Voltage (Vgs): +/- 20V Gate Charge (Qg): 18nC Drain to Source On-state Resistance (Rds): 0.0075Ohm Power Dissipation (Pd): 6.2W ...
2024-12-09 22:28:51
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... On (Max) @ Id, Vgs: 5.6 mOhm @ 30A, 10V Power - Max: 120W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Features: Low On...
2024-12-09 22:28:51
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...MOSFET Mounting Type: Through Hole Transistor Polarity: N-Channel Drain-Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 10A Rds ...
2024-12-09 22:29:06
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