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stm32f105rbt6 low power microcontroller
Selling leads
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...Power Electronics for Improved Efficiency Features: - 100V Drain-Source Breakdown Voltage - 175A Continuous Drain Current at 25°C - Low Gate Charge ...
2024-12-09 22:28:51
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...Power Electronics for High-Performance Applications Features: • Low on-resistance RDS(on): 7.8mΩ (max) • Fast switching • Low gate charge • 100% ...
2024-12-09 22:28:51
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... Current (Tc = 100°C) - 175mΩ Maximum Drain-Source On-State Resistance - Low Gate Charge - Low Input Capacitance - Fast Switching - Lead-Free and ...
2024-12-09 22:28:51
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...Power Electronics Solution for Maximum Efficiency Product Description: The IRF7480MTRPBF is a N-Channel MOSFET transistor designed for high-speed ...
2024-12-09 22:28:51
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...Power Electronics High Performance and Reliability Description: IRFB3006PBF MOSFET is a N-Channel MOSFET with a maximum drain source voltage of ...
2024-12-09 22:28:51
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...Power Electronics Transistor with Improved Performance and Reliability IRFS3306TRLPBF MOSFET Product Description: This MOSFET is a N-Channel ...
2024-12-09 22:28:51
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Product Listing: IRFH5302TRPBF N-Channel Power MOSFET Parameters: •Voltage: 55V •RDS(on): 0.13 Ohm •ID: 17A •Package: TO-252 •Configuration: Single ...
2024-12-09 22:28:51
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... • 4.2A Continuous Drain Current • Low RDS(on) • Low Gate Charge • Logic Level Gate • 100% Avalanche Tested • RoHS Compliant Applications: • High ...
2024-12-09 22:28:51
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...resistance, low gate charge, and high power dissipation. It has a drain source voltage of 100 V and a drain current of 8 A. The package type is a ...
2024-12-09 22:28:51
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...DC/DC converters, motor drivers, and power supplies. Features: • VDS (V) = 30V • ID (A) = 30A • RDS(on) (Ω) = 0.0022 • Qg (max) (nC) = 21 • Qgs (nC...
2024-12-09 22:28:51
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