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stm32f105rbt6 low power microcontroller
Selling leads
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... On-Resistance (RDS(ON)): 0.8 Ohm • Gate-Source Voltage (VGS): -4.5V to -5.5V • Continuous Drain Current (ID): 5.2A • Maximum Power Dissipation (PD...
2024-12-09 22:29:06
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... N-Channel MOSFET designed for use in high power switching applications. This device offers a 200V drain-source voltage rating and a maximum drain ...
2024-12-09 22:29:06
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... power supply designs. This MOSFET features a low on-resistance of 0.037 Ω, a low gate charge of 16 nC, and a high peak current rating of 72 A. It ...
2024-12-09 22:29:06
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... Voltage: 100V • Continuous Drain Current: 34A • On-State Resistance: 0.0046 Ohm • Gate-Source Voltage: ±20V • Maximum Power Dissipation: 55W • ...
2024-12-09 22:29:06
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... supplies, and solar inverters. Features: - Ultra-low gate charge (Qg) - Low drain-source on-state resistance (RDS(on)) - High avalanche energy ...
2024-12-09 22:29:06
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...Power Electronics This is an advanced, high-performance Power MOSFET designed for use in a wide range of applications. This device features a low ...
2024-12-09 22:29:06
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... Compliant Product Specifications: • VDS (V): 100V • ID (A): 13A • RDS(on) (mΩ): 4.8mΩ • VGS (V): -20V • Qg (Max) (nC): 27nC • Power Dissipation (W...
2024-12-09 22:29:06
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... -Package/Case: TO-220AB -Polarity: N-Channel -Gate Charge (Qg): 13 nC -Input Capacitance (Ciss): 310 pF -Power Dissipation (Pd): 30 W -Operating ...
2024-12-09 22:29:06
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... - RoHS Compliant Specifications: - Drain-Source Voltage: -20V to +60V - Gate-Source Voltage: ±20V - Drain Current: 18A - Power Dissipation: 4.2W - ...
2024-12-09 22:29:06
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...Power Electronics The FDMS86250 is a MOSFET power electronic device designed to provide high performance and reliable operation in a wide range of ...
2024-12-09 22:29:06
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