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stm32f105rbt6 low power microcontroller
Selling leads
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..., and has an extremely low gate-source threshold voltage. This device is ideal for power switching applications, and can handle a wide range of ...
2024-12-09 22:28:51
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IRLML6302TRPBF MOSFET Power Electronics Fast Switching with Low On-Resistance for Maximum Efficiency
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IRLML6302TRPBF MOSFET Power Electronics Fast Switching with Low On-Resistance for Maximum Efficiency Product Features: • Low On-Resistance: 2.6mΩ (VGS ...
2024-12-09 22:28:51
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...Power Electronics Solution Product Description: The 2N7002K-T1-GE3 is an N-Channel enhancement mode MOSFET designed for low voltage, high speed ...
2024-12-09 22:28:51
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...Drain-Source Voltage (VDS): 40V - Gate-Source Voltage (VGS): 20V - Continuous Drain Current (ID): 10A - Power Dissipation (PD): 1.8W - RDS(on): 0...
2024-12-09 22:28:51
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... efficiency in a wide range of applications. It features a low on-resistance of 4.0 ohms, low gate charge of 8.7 nC, and a high current handling ...
2024-12-09 22:28:51
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... features a low gate-source threshold voltage, a low on-state resistance, and a very low gate charge. It is suitable for use in high-efficiency and ...
2024-12-09 22:28:51
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...=10V) * Input Capacitance (Ciss): 310 pF (VDS=25V, VGS=0V) * Gate-Source Voltage (VGS): ±20V * Power Dissipation (PD): 4.9W (Tc=25°C) *
2024-12-09 22:29:06
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Product Listing: IPA65R650CE - N-Channel MOSFET Features: - High-speed switching - Low on-resistance - High breakdown voltage - Low gate charge - High ...
2024-12-09 22:29:06
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AOD2810 MOSFET Power Electronics Features: • Low RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Low Output Capacitance • High ...
2024-12-09 22:29:06
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...Power Electronics Product Features: - Low On-Resistance: RDS(on) = 2.7 mΩ (Typ.) @ VGS = 4.5 V - Low Gate Charge: Qg(total) = 3.2 nC (Typ.) @ VGS = ...
2024-12-09 22:29:06
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