231 - 240 of 3781
rf power transistors high power
Selling leads
|
FDT86244 MOSFET Power Electronics High-Speed Switching and High-Power Conversion FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
|
|
FCH072N60F MOSFET Power Electronics - High Efficiency and High Power Output for Industrial and Automotive Applications Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
|
|
IPD50R380CEAUMA1 MOSFET Power Electronics Ultra Low RDS on High Power and High Reliability FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
|
|
IKW50N65H5FKSA1 IGBT Power Module High Performance High Reliability IKW50N65H5FKSA1 - IGBT Power Module Product Parameters: Voltage: 600V Current: 50A ...
2024-12-09 22:29:41
|
|
...Power Module High Efficiency High Reliability for Automotive Applications Product Name: Infineon IGBT Power Module, IRG4PC50KDPBF Number of IGBTs: ...
2024-12-09 22:29:41
|
|
... Technical Parameters: • Voltage: 1200V • Current Rating: 40A • Gate Drive Voltage: 5-15V • Power Dissipation: 80W • Operating Temperature: -40°C ...
2024-12-09 22:29:41
|
|
..., low on-resistance and high power handling capability. This device is ideal for switching applications, including motor control and power ...
2024-12-09 22:28:51
|
|
... switching performance, low leakage current, low gate charge, and low on-resistance. The SI2304DDS-T1-GE3 is suitable for use in high power ...
2024-12-09 22:28:51
|
|
... switching characteristics. It is designed for use in high current switching applications. This MOSFET has a maximum drain-source voltage of 30V ...
2024-12-09 22:29:06
|
|
... Specifications: • Drain-Source Voltage: -100V • Drain Current-Continuous: -44A • Gate-Source Voltage: -20V • Power Dissipation: -68W • Operating ...
2024-12-09 22:28:51
|