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reliable switching mosfet in power electronics
Selling leadsFQD30N06TM TO-252-3 MOSFET Power Electronics Transistor for High Efficiency and Reliable Performance
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... nC @ 10 V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 945 pF @ 25 V FET Feature - Power Dissipation (Max) 2
2024-12-09 22:29:06
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...resistance of 0.024Ω. 4. Low gate charge of 25nC. 5. High speed switching of over 30V/ns. 6. Ease of paralleling. 7. Low thermal resistance. 8. ...
2024-12-09 22:29:06
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AOI4126 MOSFET Power Electronics The AOI4126 is a MOSFET power electronics device, designed to provide high efficiency, low power dissipation, robust ...
2024-12-09 22:29:06
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Product Name: AONR21357 MOSFET Power Electronics Description: AONR21357 is a power MOSFET designed for use in high-efficiency power electronics ...
2024-12-09 22:29:06
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...MOSFET Power Electronics High Voltage and High Current for Maximum Efficiency Product Description: The IRFPG50PBF is a 600V N-Channel MOSFET ...
2024-12-09 22:28:51
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Product Name: IRFP4110PBF MOSFET Description: This is an N-Channel, through-hole MOSFET with an on-state resistance of 4.7 mOhms. It is capable of ...
2024-12-09 22:28:51
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...MOSFET Power Electronics for Maximum Efficiency Features: • 100V Drain-Source Breakdown Voltage • -55V Gate-Source Voltage • 5.5A Continuous Drain ...
2024-12-09 22:28:51
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NTHD3101FT1G 8-SMD MOSFET Power Electronics Transistor for High-Frequency Switching Applications Drain to Source Voltage (Vdss) 20 V Current - ...
2024-12-09 22:29:06
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.... 7. High-Frequency Operation. 8. High Reliability and Temperature Performance. Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock ...
2024-12-09 22:28:51
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Product: IRF2804PBF MOSFET Parameters: - Drain to Source Voltage (Vds): 500V - Drain Current (Id): 4.4A - Gate to Source Voltage (Vgs): +/- 20V - ...
2024-12-09 22:28:51
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