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reliable switching igbt power module
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..., and 0.119 Ohm RDS(on) • High-Speed Switching • Fast Intrinsic Diode • Low Input and Output Capacitance • RoHS Compliant • Halogen and Antimony ...
2024-12-09 22:28:51
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...switching applications. It has a drain-source breakdown voltage of 100V, a drain-source resistance of 0.032 Ohm, and a gate-source threshold ...
2024-12-09 22:28:51
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SIR468DP-T1-GE3 MOSFET Power Electronics High-Performance and Reliable Switching Solution Features: • Low On-Resistance • Fast Switching Speed • Low ...
2024-12-09 22:29:06
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... Source Voltage (VDS): 100V - RDS(on): 0.045Ω - Gate-Source Voltage (VGS): 20V - Drain Current (ID): 33A - Power Dissipation (PD):
2024-12-09 22:28:51
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Product Name: SIHF12N50CE3 Manufacturer: Vishay Siliconix Description: N-Channel 500V (D-S) 175·C MOSFET Package Type: TO-263-3(D2PAK) RoHS Compliant: ...
2024-12-09 22:28:51
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FDB035N10A N-Channel MOSFET Power Electronics High-Performance Reliable Switching Solution for Power Conversion Applications FET Type N-Channel ...
2024-12-09 22:29:06
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NTR1P02LT1G MOSFET Power Electronics - High-Speed Switching and Reliable Protection for Power Control Applications FET Type P-Channel Technology ...
2024-12-09 22:29:06
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...Power Electronics High Performance Reliable Switching IRFR220NTRPBF MOSFET N-Channel Power MOSFET Product Parameters: • Drain-Source Voltage (Vdss)...
2024-12-09 22:29:06
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IRFH9310TRPBF MOSFET Power Electronics High Performance Reliable Switching for Your Projects Product Description: IRFH9310TRPBF is a high power N...
2024-12-09 22:28:51
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...: 32A - RDS (on): 0.032 Ohm - Maximum Gate Threshold Voltage: 4V - Maximum Gate Source Voltage: ±20V - Maximum Power Dissipation: 91W - Operating ...
2024-12-09 22:28:51
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