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...Ω • Gate-Source Voltage: ±20V • Continuous Drain Current: 11A • Pulsed Drain Current: 22A • Power Dissipation: 17.3W • Operating Temperature Range: ...
2024-12-09 22:29:06
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IPW60R045CP High Performance MOSFET Power Electronics for Optimal Efficiency IPW60R045CP - N-Channel MOSFET Parameters: • Drain-Source Voltage: 60V • ...
2024-12-09 22:29:06
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IPW60R099C6 MOSFET Power Electronics - High Quality High Current Low On-Resistance IPW60R099C6 N-Channel MOSFET Product Parameters: • Drain-Source ...
2024-12-09 22:29:06
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... On-Resistance (RDS(ON)): 0.8 Ohm • Gate-Source Voltage (VGS): -4.5V to -5.5V • Continuous Drain Current (ID): 5.2A • Maximum Power Dissipation (PD...
2024-12-09 22:29:06
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...-Source Voltage: -20V - Gate-Source Voltage: -6V - Drain Current (continuous): -2A - Drain Current (pulsed): -5A - Power Dissipation: 1.5W ...
2024-12-09 22:29:06
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IRF9317TRPBF MOSFET Power Electronics: High Efficiency Low Loss High-Speed Switching Description: The IRF9317TRPBF is a 100V N-Channel Power MOSFET ...
2024-12-09 22:29:06
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...MOSFET Power Electronics TO-236-3 Transistor High Speed Switching Linear Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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...MOSFET Power Electronics P-Channel -5.2 A -30 V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) ...
2024-12-09 22:29:06
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...MOSFET Power Electronics SC-75 SMD High Performance Voltage Gate Charge RDS Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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...MOSFET Power Electronics N-Channel Enhancement Mode SC-75 600V 4.3A 17.3mΩ RDS FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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