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... MOSFET with a drain-source voltage of 55V and a drain-source on-state resistance of 0.9ohm. The maximum power dissipation is 9W. This MOSFET has a ...
2024-12-09 22:28:51
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...MOSFET Power Electronics 30V N-Channel MOSFET Silicon Material Product Description: The IRFBE30PBF is a high-performance N-channel MOSFET ...
2024-12-09 22:29:06
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Listing for SPW11N80C3FKSA1 MOSFET Power Electronics Product: SPW11N80C3FKSA1 MOSFET Power Electronics Features: - 800V N-Channel Superjunction MOSFET ...
2024-12-09 22:29:06
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IRF7319TRPBF MOSFET High-Power High-Speed Switching for Power Electronics Applications Description: This MOSFET is a N-channel HEXFET® Power MOSFET ...
2024-12-09 22:28:51
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...MOSFET Power Electronics High Performance Low Loss High Current Switching. Description: The IRGB4062DPBF is a N-channel MOSFET, housed in a TO-252 ...
2024-12-09 22:28:51
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... threshold voltage of 4V. It has a maximum drain current of 61A and a maximum drain source resistance of 0.0084 Ohms. It offers a maximum power ...
2024-12-09 22:28:51
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...-Source Voltage – 20V - Maximum Power Dissipation – 14W - Operating Temperature Range – -55°C to +175°C - Packaging – Tape & Reel - RoHS Compliant ...
2024-12-09 22:29:06
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... IPD530N15N3GATMA1 MOSFET Power Electronics Product Description: The Infineon IPD530N15N3GATMA1 is a high-performance power MOSFET, designed to ...
2024-12-09 22:29:06
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... power control. Product Features: - 600V, 20A rated current - Low gate charge - Low drain-source on-resistance - Low on-...
2024-12-09 22:29:06
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...MOSFET Power Electronics This MOSFET power electronics device from Infineon Technologies is a great choice for use in applications such as motor ...
2024-12-09 22:29:06
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