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power heater temperature transducer
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AON7934 Dual N-Channel Enhancement Mode MOSFET Product Parameters: • Max Rds(on): 0.2Ω@Vgs=4.5V • Gate Charge: 5nC • Drain-Source Breakdown Voltage: ...
2024-12-09 22:29:06
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...Power MOSFET High Performance High Current Switching for Maximum Efficiency Features: • Low gate charge • Low on-resistance • Avalanche rated • ...
2024-12-09 22:28:51
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Product Listing: Product Name: IRFH5300TRPBF N-Channel MOSFET Package Type: TO-220AB VDSS (Max): 30V RDS(on) (Max): 0.24 Ohm ID (Max): 18A VGS (Max): ...
2024-12-09 22:28:51
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...Power – Max: 160W • Rds On (Max) @ Id, Vgs: 0.06 Ohm @ 12A, 10V • Vgs(th) (Max) @ Id: 4V @ 250uA • Transistor Polarity: N-Channel • FET Feature: ...
2024-12-09 22:28:51
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...: 400V • Drain Current: 60A • Gate-Source Voltage: ±20V • Drain-Source On-Resistance RDS(on): 0.100 Ω • Maximum Junction Temperature: 150°C • ...
2024-12-09 22:28:51
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...Power Supply Transistor High Performance Low On-Resistance Parameters: VDS: -20V RDS(on): 0.0045Ω ID: 3.2A Package: SOT-23 Polarity: P-Channel ...
2024-12-09 22:28:51
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...Drain-Source Voltage (VDS): 40V - Gate-Source Voltage (VGS): 20V - Continuous Drain Current (ID): 10A - Power Dissipation (PD): 1.8W - RDS(on): 0...
2024-12-09 22:28:51
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...-Source On-State Resistance: 1.2Ohm • RDS(ON) Temperature: -55°C to 175°C • Operating Temperature: -55°C to 175°C • Power Dissipation: 70W • ...
2024-12-09 22:28:51
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...Capacitance (Ciss): 3300pF • Power Dissipation (Pd): 265W • Operating Temperature (Tj): -55°C to 175°C • Maximum Junction Temperature (Tjmax): 175...
2024-12-09 22:28:51
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...: 60V • Gate-Source Voltage: ±20V • Drain Current: 14A • Drain-Source On-Resistance: ≤0.0045Ω • Input Capacitance: ≤50pF • Power Dissipation: 9.6W ...
2024-12-09 22:29:06
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