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mcu rf power transistors
Selling leads
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...Power Electronics SC-75 SMD High Performance Voltage Gate Charge RDS Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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FQD30N06TM TO-252-3 MOSFET Power Electronics Transistor for High Efficiency and Reliable Performance
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... nC @ 10 V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 945 pF @ 25 V FET Feature - Power Dissipation (Max) 2
2024-12-09 22:29:06
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...Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
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...Power Electronics Transistor for High-Speed Switching Applications Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 20...
2024-12-09 22:29:06
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...Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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...Power Electronics TO-236-3 N-Channel Enhancement Mode Field Effect Transistor High Performance FET Type P-Channel Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
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...Power Electronics TO-236-3 Package N-Channel Enhancement Mode Field Effect Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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... 1.1 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 38 pF @ 25 V FET Feature - Power Dissipation (Max)
2024-12-09 22:29:06
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... 2.4 nC @ 10 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 58 pF @ 25 V FET Feature - Power Dissipation (Max)
2024-12-09 22:29:06
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... V • On-Resistance Rds(on): 0.14 Ohm • Input Capacitance (Ciss) @ Vds: 236 pF @ 10V • Operating Temperature: -55°C ~ 175°C • Power Dissipation: 4...
2024-12-09 22:29:06
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