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low emi igbt power module
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... gate driver that uses photovoltaic isolation to provide high-speed and high-voltage isolation up to 4000Vrms. It is designed to drive high-power ...
2024-12-09 22:30:19
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...Power Electronics Product Description: The IRFB4019PBF is a high-performance, silicon-based MOSFET power electronics device from International ...
2024-12-09 22:29:06
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..., isolated gate driver with a reinforced insulation system. This device is capable of driving MOSFETs and IGBTs, and offers high-speed switching ...
2024-12-09 22:30:30
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Product Name: SIHF12N50CE3 Manufacturer: Vishay Siliconix Description: N-Channel 500V (D-S) 175·C MOSFET Package Type: TO-263-3(D2PAK) RoHS Compliant: ...
2024-12-09 22:28:51
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NTD6416ANT4G TO-252-3 MOSFET Power Electronics Module with High Power Output and Low On-Resistance N-Channel 100 V 17 A 81 m Drain to Source Voltage ...
2024-12-09 22:29:06
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FDD86102 MOSFET Power Electronics The FDD86102 is a MOSFET power electronics device designed to provide high-efficiency power conversion. It features ...
2024-12-09 22:29:06
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...Low input offset voltage: 5 μV max - Low input bias current: 1 pA max - Wide bandwidth: 10 MHz - High slew rate: 10 V/μs - High output current: 100 ...
2024-12-09 22:30:07
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...: -VDSS: 30 V -RDS(ON): 2.1 mΩ (max) -Qg: 4.7 nC (max) -VGS: ±20 V -Input Capacitance (Ciss): 740 pF (typ) -Power Dissipation (PD): 1.1 W (max) ...
2024-12-09 22:28:51
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FDMS4D0N12C N-Channel MOSFET Power Electronics Module with High Efficiency and Low On-Resistance FET Type N-Channel Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
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... superior power handling and reliability, and is suitable for a variety of power management requirements. Features: • Low Rds(on) for high ...
2024-12-09 22:29:06
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