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Product Listing: SI5855CDC-T1-E3 N-Channel Enhancement Mode MOSFET • Drain-Source Voltage: 40 V • Gate-Source Voltage: ±20 V • Continuous Drain ...
2024-12-09 22:30:07
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Product Name: NTGS4111PT1G MOSFET Product Description: The NTGS4111PT1G is a high-performance MOSFET device designed for switching applications. It ...
2024-12-09 22:28:51
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Features: • Ultra-low EMI and low RFI noise due to advanced architecture • 35-V maximum operating voltage • Peak output current up to 3.2 A • ...
2024-12-09 22:30:07
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...Logic-Level PowerTrench General FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain ...
2024-12-09 22:29:06
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... On) 4.5V, 10V Rds On (Max) @ Id, Vgs 100mOhm @ 4A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V Vgs (Max) ±20V ...
2024-12-09 22:29:06
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FDS6680A MOSFET Power Electronics 8-SOIC Package N-Channel Single N-Channel Logic Level PowerTrench®
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..., 10V Rds On (Max) @ Id, Vgs 9.5mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23 nC @ 5 V Vgs (Max) ±20V Input ...
2024-12-09 22:29:06
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... 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds ...
2024-12-09 22:29:06
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... N-Channel Logic Level SOT-223 3.0 A 60 V Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds ...
2024-12-09 22:29:06
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...Logic Level Enhancement Mode Field Effect Transistor FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current ...
2024-12-09 22:29:06
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... On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.9 nC @ 5 V Vgs (Max) ±20V ...
2024-12-09 22:29:06
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