691 - 700 of 2081
ipb60r380c6 mosfet power electronics
Selling leads
|
NVMFS5C612NLT1G MOSFET Power Electronics - High-Performance High-Efficiency Transistor for Advanced Power Applications Drain to Source Voltage (Vdss) ...
2024-12-09 22:29:06
|
|
NTD6416ANT4G TO-252-3 MOSFET Power Electronics Module with High Power Output and Low On-Resistance N-Channel 100 V 17 A 81 m Drain to Source Voltage ...
2024-12-09 22:29:06
|
|
NTTFS4C10NTAG 8-WDFN MOSFET Power Electronics – Ideal for High-Power Switching Applications N-Channel 30 V 8.2A (Ta) 44A (Tc) 790mW (Ta) Drain to ...
2024-12-09 22:29:06
|
|
...: -VDSS: 30 V -RDS(ON): 2.1 mΩ (max) -Qg: 4.7 nC (max) -VGS: ±20 V -Input Capacitance (Ciss): 740 pF (typ) -Power Dissipation (PD): 1.1 W (max) ...
2024-12-09 22:28:51
|
|
...-Source Voltage: 20V • Gate-Source Voltage: -20V • Continuous Drain Current: 17A • Pulsed Drain Current: 27A • Power Dissipation:
2024-12-09 22:28:51
|
|
... Specifications: • Drain-Source Voltage: -100V • Drain Current-Continuous: -44A • Gate-Source Voltage: -20V • Power Dissipation: -68W • Operating ...
2024-12-09 22:28:51
|
|
...MOSFET Power Electronics for High-Performance Applications Features: • Low on-resistance RDS(on): 7.8mΩ (max) • Fast switching • Low gate charge • ...
2024-12-09 22:28:51
|
|
... - Pulsed Drain Current (Idm): 60A - Rds(on): 0.019Ω - Input Capacitance (Ciss): 4200pF - Power Dissipation (Pd): 7.2W - Operating and Storage ...
2024-12-09 22:28:51
|
|
...-Source Breakdown Voltage (Vds): 100V • Gate-Source Voltage (Vgs): +/- 20V • Continuous Drain Current (Id): 34A • Power Dissipation (Pd): 143W • ...
2024-12-09 22:28:51
|
|
SI7430DP-T1-GE3 MOSFET Power Electronics High Performance Low Voltage Small Size Solution Features: • Enhanced channel temperature and power rating ...
2024-12-09 22:28:51
|